?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated april 2012 absolute maximum ratings notes: 1: repetitive rating: pulse width limited by max. juncti on temperature thermal characteristics notes: 2: mountde on 1 square pcb (fr4 or g-10 material) symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 20 a collector current @ t c = 100 o c 10 a i cm (1) pulsed collector current @ t c = 25 o c 30 a i f diode forward current @ t c = 25 o c 10 a p d maximum power dissipation @ t c = 25 o c 139 w maximum power dissipation @ t c = 100 o c 56 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.9 o c / w r jc (diode) thermal resistance, junction to case - 3.5 o c / w r ja thermal resistance, junction to ambient (pcb mount)( 2) - 62.5 o c / w FGP10N60UNDF 600v, 10a short circuit rated igbt features ? short circuit rated 10us ? high current capability ? high input impedance ? fast switching ? rohs compliant applications ? home appliance inverter-driven appplication - air conditioner, washing machine, refrigerator, dish washer ? industrial inverter - sewing machine, cnc general description using advanced npt igbt technology, fairchilds the npt igbts offer the optimum performance for low power inv erter- driven applications where low-losses and short circuit rug ged- ness feature are essential. g c e to-220 g c e
2 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGP10N60UNDF FGP10N60UNDF to220 tube 50ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v i ces collector cut-off current v ce = v ces , v ge = 0v - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 10 ua on characteristics v ge(th) g-e threshold voltage i c = 10ma, v ce = v ge 5.5 6.8 8.5 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v - 2 2.45 v i c = 10a , v ge = 15v, t c = 125 o c - 2.3 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 517 pf c oes output capacitance - 65 pf c res reverse transfer capacitance - 20 pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 10a, r g = 10 , v ge = 15v, inductive load, t c = 25 o c - 8.0 ns t r rise time - 6.3 ns t d(off) turn-off delay time - 52.2 ns t f fall time - 19.1 24.8 ns e on turn-on switching loss - 0.15 mj e off turn-off switching loss - 0.05 mj e ts total switching loss - 0.2 mj t d(on) turn-on delay time v cc = 400v, i c = 10a, r g = 10 , v ge = 15v, inductive load, t c = 125 o c - 8.1 ns t r rise time - 7.3 ns t d(off) turn-off delay time - 55.1 ns t f fall time - 34.2 ns e on turn-on switching loss - 0.22 mj e off turn-off switching loss - 0.08 mj e ts total switching loss - 0.3 mj t sc short circuit withstand time v cc = 350v, r g = 100 , v ge = 15v, t c = 150 o c 10 - - s
3 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated electrical characteristics of the igbt t c = 25c unless otherwise noted electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 10a, v ge = 15v - 37 nc q ge gate to emitter charge - 5 nc q gc gate to collector charge - 21 nc symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 10a t c = 25 o c - 1.8 2.2 v t c = 125 o c - 1.7 t rr diode reverse recovery time i f = 10a, di f /dt = 200a/ s t c = 25 o c - 37.7 ns t c = 125 o c - 78.9 q rr diode reverse recovery charge t c = 25 o c - 75 nc t c = 125 o c - 221
4 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated ttypical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 20v 17v t c = 25 o c 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 20v 17v t c = 125 o c 15v v ge = 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 0 10 20 30 40 50 60 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 3 6 9 12 15 0 10 20 30 40 50 60 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20a 10a i c = 5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 5a 10a 20a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
5 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated typical performance characteristics typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance cha racteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs . gate resistance gate r esistance 4 8 12 16 20 0 4 8 12 16 20 i c = 5a 10a 20a common emitter t c = 125 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 1 10 10 100 1000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 3000 0 5 10 15 20 25 30 35 40 45 50 0 3 6 9 12 15 common emitter t c = 25 o c 400v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 1 10 100 1000 0.01 0.1 1 10 100 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms 10 ms dc 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 10 20 30 40 50 60 1 10 common emitter v cc = 400v, v ge = 15v i c = 10a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ] 50 0 10 20 30 40 50 60 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 10a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ]
6 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics v s. collector current coll ector current figure 15. switching loss vs. figure 16. switching loss vs gate resistance collec tor current figure 17. turn off switching figure 18. forward characterist ics soa characteristics 0 5 10 15 20 25 10 100 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 300 5 0 5 10 15 20 25 1 10 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] collector current, i c [a] 30 0 5 10 15 20 25 100 10 common emitter v ge = 15v, r g = 10 t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 1000 0 10 20 30 40 50 60 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 10a t c = 25 o c t c = 125 o c e on e off switching loss [ j] gate resistance, r g [ ] 5 0 1 2 3 t j = 75 o c 30 10 1 t j = 25 o c t j = 125 o c forward voltage, v f [v] forward current, i f [a] 1 10 100 1000 1 10 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 50
7 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated typical performance characteristics figure 19. reverse recovery current figure 20. stored charge figure 21. reverse recovery time figure 22.transient thermal impedance of igbt 0 2 4 6 8 10 12 0.0 0.1 0.2 0.3 t c = 25 o c t c = 125 o c 200a/ s di/dt = 100a/ s stored recovery charge, q rr [ns] forward current, i f [a] 200a/ s di/dt = 100a/ s 50 200 400 600 1e-3 0.01 0.1 1 10 100 reverse current , i r [ a] reverse voltage, v r [v] t j = 125 o c t j = 25 o c t j = 75 o c 0 2 4 6 8 10 12 0 20 40 60 80 100 t c = 25 o c t c = 125 o c 200a/ s di/dt = 100a/ s stored recovery charge, t rr [nc] forward current, i f [a] 200a/ s di/dt = 100a/ s 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 0.00001 0.0001 0.001 0.01 0.1 0.005 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
8 www.fairchildsemi.com FGP10N60UNDF rev.a FGP10N60UNDF 600v, 10a short circuit rated mechanical dimensions to-220
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